參數(shù)資料
型號(hào): HGTG12N60C3D
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 24 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 98K
代理商: HGTG12N60C3D
6
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.01
0.5
0.2
0.1
0.05
0.02
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
10
0
20
30
40
50
100
o
C
25
o
C
150
o
C
40
30
20
10
0
t
r
,
I
EC
, FORWARD CURRENT (A)
5
10
20
t
rr
T
C
= 25
o
C, dI
EC
/dt = 100A/
μ
s
0
15
t
b
t
a
Test Circuit and Waveform
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
R
G
= 25
L = 100
μ
H
V
DD
= 480V
+
-
RHRP1560
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTG12N60C3D
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參數(shù)描述
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