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參數(shù)資料
| 型號(hào)： | HGTG12N60B3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 27 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | HGTG12N60B3D |
2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
Diode Reverse Recovery Time
t
rr
I
EC
= 12A, dI
EC
/dt = 100A/
μ
s
I
EC
= 1.0A, dI
EC
/dt = 100A/
μ
s
IGBT
-
34
42
ns
-
30
37
ns
Thermal Resistance
R
θ
JC
-
-
1.2
o
C/W
o
C/W
Diode
-
-
1.5
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
40
50
60
70
80
10.0V
I
C
,
0
30
0
1
2
3
4
5
40
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
10
20
50
70
80
60
I
C
,
0
30
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
10
20
40
50
60
70
80
HGTG12N60C3D
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| HGT1S12N60B3DS | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
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| HGTG20N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG12N60C3D | 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60C3DR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG12N60D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
| HGTG12N60D1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris 功能描述:Harris TO-247 NXC6A, NXF7D 制造商:Harris Corporation 功能描述: |
| HGTG12N60DID | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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