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參數(shù)資料
| 型號： | HGTG12N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 394K |
| 代理商： | HGTG12N60A4D |
2-5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
4
8
2
95
6
85
90
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
12
115
16
14
105
110
10
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
30
20
50
70
40
60
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
4
8
2
6
12
16
14
10
18
20
22
24
80
90
I
C
,
0
50
100
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
6
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
16
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
0
20
10
30
4
10
40
I
G(REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
50
60
70
80
6
8
12
16
V
CE
= 600V
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
0
0.2
0.4
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125
25
150
1.2
0.8
E
T
,
R
G
= 10
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
E
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
5
1000
I
CE
= 12A
I
CE
= 24A
I
CE
= 6A
10
T
J
= 125
o
C, L = 500
μ
H,
V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
E
T
,
E
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S12N60A4S | 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管) |
| HGTG12N60A4 | 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60B3DS | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGTG12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG12N60A4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
| HGTG12N60B3 | 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTG12N60C3D | 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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