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參數資料
| 型號： | HGTG12N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 394K |
| 代理商： | HGTG12N60A4D |
2-3
Diode Forward Voltage
V
EC
t
rr
I
EC
= 12A
I
EC
= 12A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
-
2.2
-
V
Diode Reverse Recovery Time
-
30
-
ns
-
18
-
ns
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.75
o
C/W
o
C/W
Diode
-
-
2.0
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
40
20
30
25
75
100
125
150
60
50
V
GE
= 15V,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I
C
,
10
20
300
400
200
100
500
600
0
50
60
30
70
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 200
μ
H
T
C
75
o
C
V
GE
15V
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
30
10
20
500
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.75
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 125
o
C, R
G
= 10
, L = 500
μ
H, V
CE
= 390V
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
10
11
12
15
0
2
10
16
50
125
175
300
t
SC
I
SC
20
250
13
14
4
6
8
12
14
18
75
100
150
200
225
275
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
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| HGTG12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTG12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG12N60A4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
| HGTG12N60B3 | 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTG12N60C3D | 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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