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參數(shù)資料
| 型號： | HGTD7N60C3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 153K |
| 代理商： | HGTD7N60C3S |
3-18
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
4
6
8
10
12
0
5
10
20
25
30
35
14
15
40
T
C
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
5
10
15
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
20
25
30
35
40
10.0V
I
C
,
0
15
0
1
2
3
4
5
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
5
10
25
35
40
30
DUTY CYCLE <0.5%, V
GE
= 10V
PULSE DURATION = 250
μ
s
I
C
,
0
15
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
5
10
20
25
30
35
40
25
50
75
100
125
150
0
3
6
9
12
15
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
60
80
120
t
S
,
μ
S
10
11
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
12
14
15
13
140
100
40
I
SC
t
SC
10
12
V
CE
= 360V, R
GE
= 50
, T
J
= 125
o
C
4
6
8
2
HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3
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| HGTD7N60C3S9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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