- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384405 > HGTD7N60C3S (FAIRCHILD SEMICONDUCTOR CORP) 14A, 600V, UFS Series N-Channel IGBTs PDF資料下載
參數(shù)資料
| 型號(hào)： | HGTD7N60C3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | HGTD7N60C3S |
3-17
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 3mA, V
GE
= 0V
16
30
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
μ
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
2.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.6
2.0
V
T
C
= 150
o
C
-
1.9
2.4
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.0
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
25V
-
-
±
250
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 50
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
40
-
-
A
V
CE(PK)
= 600V
6
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
23
30
nC
V
GE
= 20V
-
30
38
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 50
L = 1.0mH
-
8.5
-
ns
Current Rise Time
t
RI
-
11.5
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
350
400
ns
Current Fall Time
t
FI
-
140
275
ns
Turn-On Energy
E
ON
-
165
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
600
-
μ
J
Thermal Resistance
R
θ
JC
-
-
2.1
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 were test-
ed per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true
total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
| HGTG10N120BN | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG10N120BND | 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT |
| HGTG10N120BND | 36 MACROCELL 3.3 VOLT ISP CPLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD7N60C3S9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD8P50G1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD8P50G1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD8P50GIS | 制造商:Harris Corporation 功能描述: |
| HGTG10N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, NPT Series N-Channel IGBT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。