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參數(shù)資料
| 型號(hào)： | HGTD7N60B3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 92K |
| 代理商： | HGTD7N60B3S |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (V)
10
5
10
1
100
15
4
6
8
3
2
400
T
J
= 150
o
C, R
G
= 50
, L = 2mH, V
CE
= 480V
T
C
75
o
C
V
GE
110
o
C 10V
110
o
C 15V
10V
75
o
C
15V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 2.1
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
20
40
60
80
100
2
6
10
14
18
V
CE
= 360V, R
G
= 50
, T
J
= 125
o
C
I
SC
t
SC
0
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
30
1
3
5
7
5
15
25
DUTY CYCLE < 0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
PULSE DURATION = 250
μ
s
0
4
6
8
2
3
5
7
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
40
30
1
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
μ
J
1200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
15
1600
800
400
0
9
5
1
3
7
11
13
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
R
G
= 50
, L = 2mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
15
800
0
11
9
5
1
200
600
1000
3
7
13
400
T
J
= 150
o
C, V
GE
= 10V AND 15V
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V AND 15V
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