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參數(shù)資料
| 型號： | HGTD10N40F1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 12 A, 400 V, N-CHANNEL IGBT, TO-251AA |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HGTD10N40F1 |
3-4
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ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
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FAX: (32) 2.724.22.05
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
Test Circuit
FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
100
10
1
f
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, T
C
= +100
o
C, V
GE
= 10V
R
G
= 25
, PT = 75W, L = 50
μ
H
V
CE
= 200V
V
CE
= 400V
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
NOTE:
V
C
,500
375
250
125
0
V
G
,
10
5
0
V
CC
= BV
CES
V
CC
= BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
COLLECTOR-EMITTER VOLTAGE
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
GATE-
EMITTER
VOLTAGE
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
R
L
= 100
I
G(REF)
= 0.33mA
V
GE
= 10V
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 50
μ
H
V
400V
+
R
L
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD10N40F1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD10N50F1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD10N50F1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD1N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120BNS9A | 功能描述:IGBT 晶體管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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