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參數資料
| 型號： | HGT1S7N60B3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 5/7頁 |
| 文件大?。?/td> | 92K |
| 代理商： | HGT1S7N60B3S |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
10
5
1
9
11
15
20
30
40
50
60
3
7
13
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
R
G
= 50
, L = 2mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
1
20
60
40
80
100
0
5
9
13
15
3
7
11
120
140
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 25
o
C and 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
t
d
,
5
9
13
15
100
150
200
250
50
3
7
11
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
1
5
9
13
15
80
120
100
3
7
11
40
60
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V and 15V
T
J
= 25
o
C, V
GE
= 10V and 15V
I
C
,
0
16
24
32
8
14
6
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
40
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
V
CE
= 10V
DUTY CYCLE = < 0.5%
Q
G
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
12
8
16
28
V
G
,
24
4
I
g(REF)
= 0.758mA, R
L
= 86
,
T
C
= 25
o
C
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S7N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| HGT1S7N60C3D | 功能描述:IGBT 晶體管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
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