參數(shù)資料
型號(hào)： HGT1S7N60A4S9A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 600V, SMPS Series N-Channel IGBT
中文描述： 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 6/8頁(yè)
文件大?。?/td> 204K
代理商： HGT1S7N60A4S9A
2003 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
20
40
60
80
100
0
0.2
0.6
0.8
1.4
0.4
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
1.2
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
1.8
10
12
2.0
2.4
2.2
11
13
14
15
16
2.6
2.8
V
C
,
I
CE
= 14A
I
CE
= 7A
I
CE
= 3.5A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s,
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 25
L = 1mH
V
DD
= 390V
+
-
RHRP660
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
相關(guān)PDF資料
PDF描述
HGT1S7N60B3S 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGTD7N60B3S 14A, 600V, UFS Series N-Channel IGBTs
HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP7N60C3D 72 MACROCELL 3.3 VOLT ISP CPLD
HGTP7N60C3D 3.3V 72-mc CPLD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S7N60A4S9A_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT
HGT1S7N60B3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S7N60B3D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S7N60B3DS 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGT1S7N60B3DS9A 功能描述:IGBT 晶體管 14A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*