- 您現在的位置：買賣IC網 > PDF目錄384405 > HGT1S7N60A4S9A (FAIRCHILD SEMICONDUCTOR CORP) 600V, SMPS Series N-Channel IGBT PDF資料下載
參數資料
| 型號： | HGT1S7N60A4S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT |
| 中文描述： | 34 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 204K |
| 代理商： | HGT1S7N60A4S9A |
2003 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θ
JC
IGBT and Diode at T
J
= 125
o
C
I
CE
= 7A
V
CE
= 390V
V
GE
= 15V
R
G
= 25
L = 1mH
Test Circuit (Figure 20)
-
10
-
ns
Current Rise Time
-
7
-
ns
Current Turn-Off Delay Time
-
130
150
ns
Current Fall Time
-
75
85
ns
Turn-On Energy (Note 2)
-
50
-
μ
J
Turn-On Energy (Note 2)
-
200
215
μ
J
Turn-Off Energy (Note 3)
-
125
170
μ
J
Thermal Resistance Junction To Case
-
-
1.0
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
30
20
25
25
75
100
125
150
35
V
GE
= 15V
15
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
20
0
I
C
,
300
400
200
100
500
600
0
30
10
40
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 100
μ
H
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
200
20
5
10
500
T
J
= 125
o
C, R
G
= 25
, L = 2mH, V
CE
= 390V
100 f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 1.0
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
V
GE
15V
75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
15
4
6
14
20
80
100
140
16
13
14
8
10
12
40
60
120
V
CE
= 390V, R
G
= 25
, T
J
= 125
o
C
t
SC
I
SC
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
相關PDF資料 |
PDF描述 |
|---|---|
| HGT1S7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGTD7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs |
| HGT1S7N60C3D | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGTP7N60C3D | 72 MACROCELL 3.3 VOLT ISP CPLD |
| HGTP7N60C3D | 3.3V 72-mc CPLD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S7N60A4S9A_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT |
| HGT1S7N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S7N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S7N60B3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S7N60B3DS9A | 功能描述:IGBT 晶體管 14A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。