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參數(shù)資料
| 型號： | HGT1S20N60C3S9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 144K |
| 代理商： | HGT1S20N60C3S9A |
2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
15
25
5
250
20
100
175
125
150
200
225
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
30
35
40
R
G
= 10
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
275
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
60
80
100
40
50
70
90
10
20
25
5
15
30
35
40
R
G
= 10
, L = 1mH, V
CE
= 480V
110
120
T
J
= 150
o
C, V
GE
= 10V OR V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
C
,
0
50
100
150
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
12
13
14
15
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
Q
g
, GATE CHARGE (nC)
0
8
10
6
4
2
0
10
20
40
V
G
,
50
100
30
12
14
16
I
G (REF)
= 1mA, R
L
= 15
, T
C
= 25
o
C
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
60
70
80
90
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
C
1
2
3
4
5
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
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相關代理商/技術參數(shù) |
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| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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