參數(shù)資料
型號： HGT1S20N60C3S9A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53
中文描述： 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁數(shù)： 3/8頁
文件大?。?/td> 144K
代理商： HGT1S20N60C3S9A
2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θ
JC
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
Test Circuit (Figure 17)
-
28
32
ns
Current Rise Time
-
24
28
ns
Current Turn-Off Delay Time
-
280
450
ns
Current Fall Time
-
108
210
ns
Turn-On Energy (Note 4)
-
380
410
μ
J
Turn-On Energy (Note 4)
-
1.0
1.1
mJ
Turn-Off Energy (Note 3)
-
1.2
1.7
mJ
o
C/W
Thermal Resistance Junction To Case
-
-
0.76
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 17.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
V
GE
= 15V
25
75
100
125
150
50
30
10
20
40
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
60
700
40
I
C
,
20
300
400
200
100
500
600
0
80
100
120
140
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 100
μ
H
0
f
M
,
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
1
100
40
10
20
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.76
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
V
GE
15V
110
o
C
10V
15V
75
o
C
75
o
C
110
o
C
10V
T
J
= 150
o
C, R
G
= 10
,
L = 1mH, V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
2
4
6
8
150
200
250
300
350
t
SC
I
SC
10
12
14
400
450
V
CE
= 360V, R
G
= 10
, T
J
= 125
o
C
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
相關(guān)PDF資料
PDF描述
HGT1S2N120BNDS 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管)
HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
HGT1S2N120BNS XC9536-7PC44I - NOT RECOMMENDED for NEW DESIGN
HGT1S2N120CNS XC9536-7VQ44C - NOT RECOMMENDED for NEW DESIGN
HGTP2N120BN 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S2N120BNDS 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S2N120BNDS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB
HGT1S2N120BNS 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT
HGT1S2N120BNS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB
HGT1S2N120CN 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*