參數(shù)資料
型號(hào): HGT1S12N60C3DS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
中文描述: 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 154K
代理商: HGT1S12N60C3DS
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
25
50
75
100
125
150
0
5
10
15
20
25
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
20
60
80
120
t
S
,
μ
s
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
140
100
40
I
SC
5
10
15
20
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
t
SC
t
d
,
10
20
30
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
25
30
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
300
200
100
5
10
15
20
25
30
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
5
10
100
5
10
15
20
25
30
V
GE
= 15V
V
GE
= 10V
200
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
100
90
5
10
15
20
25
30
200
300
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V OR 15V
80
HGTP12N60C3D, HGT1S12N60C3DS
相關(guān)PDF資料
PDF描述
HGTP14N36G3VL DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
HGT1S14N36G3VL 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VLS DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
HGTP14N37G3VL TRANSISTOR PNP BIPOLAR 45V SOT23
HGT1S14N37G3VLS9A TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S12N60C3DS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3DST 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60C3S 制造商:Harris Corporation 功能描述:
HGT1S12N60C3S9A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB