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參數(shù)資料
| 型號： | HGT1S12N60C3DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 154K |
| 代理商： | HGT1S12N60C3DS |
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
Diode Reverse Recovery Time
t
rr
I
EC
= 12A, dI
EC
/dt = 200A/
μ
s
-
32
40
ns
I
EC
= 1.0A, dI
EC
/dt = 200A/
μ
s
-
23
30
ns
Thermal Resistance
R
θ
JC
IGBT
-
-
1.2
o
C/W
Diode
-
-
1.9
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (I
CE
= 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
losses due to diode recovery.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
40
50
60
70
80
10.0V
I
C
,
0
30
0
1
2
3
4
5
40
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
10
20
50
70
80
60
I
C
,
0
30
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
10
20
40
50
60
70
80
HGTP12N60C3D, HGT1S12N60C3DS
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| HGT1S12N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3DST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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| HGT1S12N60C3S9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
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