參數(shù)資料
型號(hào)： HGT1N40N60A4
廠商： Fairchild Semiconductor Corporation
英文描述： 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述： 600V的，開(kāi)關(guān)電源系列N溝道IGBT的與反平行Hyperfast二極管
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 152K
代理商： HGT1N40N60A4
2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
10
30
0
150
20
130
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
50
190
70
60
170
180
40
160
80
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V or 15V, T
J
= 25
o
C
R
G
= 2.2
, L = 200mH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
35
30
45
40
10
30
0
20
50
70
60
40
80
55
50
65
60
70
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 2.2
, L = 200mH, V
CE
= 390V
I
C
,
0
50
100
7
8
9
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
250
6
300
350
400
PULSE DURATION = 250ms
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
0
100
50
150
4
10
200
250
300
350
400
6
8
12
16
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
I
G(REF)
= 1mA, R
L
= 7.5
, T
C
= 25
o
C
0
1
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
5
125
25
150
4
E
T
,
I
CE
= 80A
I
CE
= 20A
I
CE
= 40A
T
J
= 125
o
C, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+E
OFF
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
10
1
500
E
T
,
I
CE
= 80A
I
CE
= 40A
I
CE
= 20A
70
E
TOTAL
= E
ON2
+E
OFF
T
J
= 125
o
C, V
CE
= 390V, V
GE
= 15V
HGT1N40N60A4D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1N40N60A4D 功能描述:IGBT 晶體管 45A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S020N35G3VL 制造商:Harris Corporation 功能描述:
HGT1S10N120BNS 功能描述:IGBT 晶體管 35A 1200V NPT N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S10N120BNS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB
HGT1S10N120BNST 功能描述:IGBT 晶體管 N-Channel IGBT NPT Series 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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