參數(shù)資料
型號： HGT1N40N60A4
廠商： Fairchild Semiconductor Corporation
英文描述： 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述： 600V的，開關(guān)電源系列N溝道IGBT的與反平行Hyperfast二極管
文件頁數(shù)： 2/10頁
文件大小： 152K
代理商： HGT1N40N60A4
2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Noted
HGT1N40N60A4D
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
At T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
J
= 150
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T
C
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size
CES
o
C25
110
45
300
±
20
±
30
A
A
A
V
V
o
C110
CM
GES
GEM
o
200A at 600V
298
2.3
2500
-55 to 150
1.5
1.7
o
D
W
o
W/
o
C
ISOL
, T
STG
V
o
J
C
N-m
N-m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
V
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
CE
= BV
CES
T
J
= 25
o
C
o
-
-
250
μ
A
T
J
= 125
C
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
V
C
= 40A,
GE
= 15V
T
J
= 25
o
C
o
-
1.7
2.7
V
T
J
= 125
C
-
1.5
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
V
= 250
μ
A, V
CE
= V
GE
4.5
5.6
7
V
Gate to Emitter Leakage Current
GE
= 150
L = 100
=
±
20V
o
C, R
μ
H, V
-
-
±
250
nA
Switching SOA
T
J
G
= 2.2
CE
= 600V
= 0.5 BV
,
V
GE
= 15V
200
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
I
C
V
= 40A, V
CE
CES
-
8.5
-
V
On-State Gate Charge
Q
g(ON)
= 40A,
CE
= 0.5 BV
CES
V
GE
= 15V
-
350
405
nC
V
GE
= 20V
o
C
-
450
520
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
IGBT and Diode at T
I
CE
= 40A
V
CE
= 0.65 BV
V
GE
=15V
R
G
= 2.2
L = 200
μ
H
Test Circuit (Figure 24)
J
= 25
CES
-
25
-
ns
Current Rise Time
-
18
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
V
EC
-
145
-
ns
Current Fall Time
-
35
-
ns
Turn-On Energy (Note 3)
-
400
-
μ
μ
μ
J
Turn-On Energy (Note 3)
-
850
-
J
Turn-Off Energy (Note 2)
-
370
-
J
Current Turn-On Delay Time
IGBT and Diode at T
I
CE
= 40A
V
CE
= 0.65 BV
V
GE
= 15V
R
G
= 2.2
L = 200
μ
H
Test Circuit (Figure 24)
J
= 125
o
C
CES
-
27
-
ns
Current Rise Time
-
20
-
ns
Current Turn-Off Delay Time
-
185
225
ns
Current Fall Time
-
55
95
ns
Turn-On Energy (Note3)
-
400
-
μ
μ
μ
J
Turn-On Energy (Note 3)
-
1220
1400
J
Turn-Off Energy (Note 2)
-
660
775
J
Diode Forward Voltage
I
EC
= 40A
-
2.25
2.7
V
HGT1N40N60A4D
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HGT1S020N35G3VL 制造商:Harris Corporation 功能描述:
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