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參數(shù)資料
| 型號： | HFB06PB120 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFRED Ultrafast, Soft Recovery Diode |
| 中文描述： | HEXFRED二極超快，軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 188K |
| 代理商： | HFB06PB120 |
Bulletin PD -2.363 rev. D 12/00
Ultrafast Recovery
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA06PB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
6 amps continuous current, the HFA06PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
RRM
)
and does not exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
count and heatsink sizes. The HEXFRED HFA06PB120 is ideally suited for applications
in power supplies and power conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA06PB120
Absolute Maximum Ratings
-55 to +150
A
°C
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 6.0A
Q
rr
(typ.)= 116nC
I
RRM
(typ.)
= 4.4A
t
rr
(typ.)
= 26ns
di
(rec)M
/dt (typ.)* = 100A/μs
*
125°C
TO-247AC (Modified)
1
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
8.0
80
24
62.5
25
Units
V
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
W
1
BASE
CATHODE
2
3
CATHODE
ANODE
2
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFB06PB120PBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 6 A |
| HFB06TB120 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 6 A |
| HFB06TB120PBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 6 A |
| HFB06TB120STR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 6 A |
| HFB06TB120STRPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 6 A |
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