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參數(shù)資料
| 型號： | HFB08TB120 |
| 廠商： | International Rectifier |
| 英文描述： | Ultrafast, Soft Recovery Diode |
| 中文描述： | 超快，軟恢復二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 130K |
| 代理商： | HFB08TB120 |
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
1200
8.0
130
32
73.5
29
- 55 to 150
Units
V
A
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
W
°C
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA08TB120
1
Ultrafast Recovery
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F (AV)
= 8.0A
Q
rr
(typ.)= 140nC
I
RRM
(typ.)
= 4.5A
t
rr
(typ.)
= 28ns
di
(rec) M
/dt (typ.)* = 85A /μs
Bulletin PD -2.383 rev. C 11/00
Absolute Maximum Ratings
* 125°C
TO-220AC
1
BASE
CATHODE
2
3
CATHODE
ANODE
2
4
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HFB08TB120PBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 8 A |
| HFB095051-100 | 功能描述:EMI/RFI 抑制器及鐵氧體 64ohms 300MHz 5.08mm Inside Dia. RoHS:否 制造商:Fair-Rite 產品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
| HFB095051-200 | 功能描述:EMI/RFI 抑制器及鐵氧體 120ohms 300MHz 5.08mm Inside Dia. RoHS:否 制造商:Fair-Rite 產品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
| HFB-10 | 功能描述:熔絲座 WATERPROOF IN-LINE RoHS:否 制造商:Littelfuse 產品: 電流額定值:30 A 電壓額定值:1000 VDC 極數(shù):1 系列: 安裝風格:DIN Rail 端接類型: 軸類型: 工作溫度范圍: |
| HFB123049-000 | 功能描述:EMI/RFI 抑制器及鐵氧體 50ohms 300MHz 4.88mm Inside Dia. RoHS:否 制造商:Fair-Rite 產品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
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