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參數(shù)資料
| 型號(hào)： | HFA3096 |
| 廠商： | Intersil Corporation |
| 英文描述： | Ultra High Frequency Transistor Arrays |
| 中文描述： | 超高頻晶體管陣列 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 57K |
| 代理商： | HFA3096 |
3-455
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
DIE DIMENSIONS:
53 mils x 52 mils x 19 mils
1340
μ
m x 1320
μ
m x 483
μ
m
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8k
±
0.4k
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16k
0.8k
PASSIVATION:
Type: Nitride
Thickness: 4k
±
0.5k
PROCESS:
UHF-1
SUBSTRATE POTENTIAL: (POWERED UP)
Unbiased
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
HFA3046
Pad numbers correspond to SOIC pinout.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1320
μ
m
(52mils)
1340
μ
m
(53mils)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
1320
μ
m
(52mils)
1340
μ
m
(53mils)
HFA3046, HFA3096, HFA3127, HFA3128
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HFA3128B | Ultra High Frequency Transistor Arrays |
| HFA3127B | Ultra High Frequency Transistor Arrays |
| HFA3046B | Ultra High Frequency Transistor Arrays |
| HFA3096B | Ultra High Frequency Transistor Arrays |
| HFA3134IHZ96 | Ultra High Frequency Matched Pair Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFA3096B | 功能描述:IC TRANS ARRAY NPN/PNP 16-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| HFA3096B96 | 功能描述:IC TRANS ARRAY NPN/PNP 16-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| HFA3096BZ | 功能描述:兩極晶體管 - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HFA3096BZ96 | 功能描述:射頻雙極小信號(hào)晶體管 W/ANNEAL TXARRAY 3X NPN 2X PNP 16N RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA30PA60C | 功能描述:整流器 600 Volt 2x15 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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