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參數(shù)資料
| 型號(hào)： | HF150-50F |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | HF150-50F |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
110
UNITS
V
BV
CES
I
C
= 100 mA
110
V
BV
CEO
I
C
= 100 mA
55
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CEO
V
CE
= 30 V
5
mA
I
CES
V
CE
= 60 V
5
mA
h
FE
V
CE
= 6 V I
C
= 1.4 A
18
43.5
---
C
ob
V
CB
= 50 V
f = 1.0 MHz
220
pF
G
P
IMD
3
h
C
V
CE
= 50 V I
CQ
= 100 mA P
OUT
= 150 W
(PEP)
14
37
-30
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
HF150-50F
DESCRIPTION:
The
ASI HF150-50F
is Designed for
FEATURES:
P
G
= 14 dB min. at 150 W/30 MHz
IMD
3
= 100 dBc max. at 150 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
q
JC
10 A
110 V
55 V
4.0 V
233 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.75
O
C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10612
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
H
A
MAXIMUM
inches / mm
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.230 / 5.84
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
E
C
E
B
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