參數(shù)資料
型號(hào)： HF20-12F
廠商： ADVANCED SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： RES CURR SENSE .090 OHM 7W 1%
中文描述： VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： 0.380 INCH, FM-4
文件頁數(shù)： 1/1頁
文件大?。?/td> 19K
代理商： HF20-12F
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
BV
CES
I
C
= 50 mA
36
V
BV
CEO
I
C
= 50 mA
18
V
BV
EBO
I
E
= 5.0 mA
4.0
V
I
CES
V
CE
= 15 V
5
mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
10
200
C
OB
V
CB
= 12.5 V f = 1.0 MHz
100
pF
G
PE
IMD
3
h
C
V
CC
= 12.5 V I
CQ
= 25 mA P
OUT
= 20 W
(
PEP
)
f = 30.000 & 30.001 MHz
15
-30
18
55
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
HF20-12F
DESCRIPTION:
The
HF20-12F
is Designed for 12.5 V
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
Replacement for
MRF433
&
SD1285
·
P
G
= 18 dB Typical at 30MHz & 20W
Withstands
20:1 Load VSWR
MAXIMUM RATINGS
I
C
4.5 A
V
CB
36 V
V
CE
18 V
V
EB
4.0 V
P
DISS
80 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.2
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
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