參數(shù)資料
型號: HEF4069UBN
廠商: NXP Semiconductors N.V.
元件分類: 電容
英文描述: CERAMIC CHIP/MIL-PRF-55681
中文描述: 陶瓷芯片/mil-prf-55681
文件頁數(shù): 5/7頁
文件大小: 116K
代理商: HEF4069UBN
January 1995
5
Philips Semiconductors
Product specification
Hex inverter
HEF4069UB
gates
APPLICATION INFORMATION
Some examples of applications for the HEF4069UB are shown below.
In Fig.7 an astable relaxation oscillator is given. The oscillation frequency is mainly determined by R1C1, provided
R1 << R2 and R2C2 << R1C1.
Fig.7
(a) Astable relaxation oscillator using two HEF4069UB inverters; the diodes may be BAW62; C2 is a
parasitic capacitance. (b) Waveforms at the points marked A, B, C and D in the circuit diagram.
The function of R2 is to minimize the influence of the forward voltage across
the protection diodes on the frequency; C2 is a stray (parasitic) capacitance.
The period T
p
is given by T
p
= T
1
+ T
2
, in which
V
is the signal threshold level of the inverter. The period is fairly independent
of V
DD
, V
ST
and temperature. The duty factor, however, is influenced by V
ST
.
T
1
R1C1 In
V
----------------------------
and T
2
V
+
ST
R1C1 In
2 V
DD
V
ST
----------------–
where
=
=
(a)
(b)
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