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參數(shù)資料
| 型號： | HDD64M72D18W-13A |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., with 184Pin-DIMM |
| 中文描述： | DDR SDRAM內(nèi)存模塊512Mbyte（64Mx72bit），在32Mx8，4Banks，8K的參考依據(jù)。與184Pin - DIMM內(nèi)存 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 190K |
| 代理商： | HDD64M72D18W-13A |
HANBit
HDD64M72D18W
URL : www.hbe.co.kr 8 HANBit Electronics Co.,Ltd
.
REV 1.0 (August.2002)
AC CHARACTERISTICS
(These AC charicteristics were tested on the Component)
DDR200
DDR266A
DDR266B
-10A
-13A
-13B
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
NOTE
Row cycle time
t
RC
70
65
65
ns
1
Refresh row cycle time
t
RFC
80
75
75
ns
1,2
Row active time
t
RAS
48
120K
45
120K
45
120K
ns
1,2
/RAS to /CAS delay
t
RCD
20
20
20
ns
3
Row precharge time
t
RP
20
20
20
ns
3
Row active to Row active delay
t
RRD
15
15
15
ns
3
Write recovery time
t
WR
2
2
2
t
CK
3
Last data in to Read command
t
CDLR
1
1
1
t
CK
2
Col. address to Col. address delay
t
CCD
1
1
1
t
CK
CL=2.0
10
12
7.5
12
10
12
ns
Clock cycle time
CL=2.5
t
CK
12
7.5
12
7.5
12
ns
Clock high level width
t
CH
0.45
0.55
0.45
0.55
0.45
0.55
t
CK
Clock low level width
t
CL
0.45
0.55
0.45
0.55
0.45
0.55
t
CK
DQS-out access time from CK/CK
t
DQSCK
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
t
AC
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
t
DQSQ
-
+0.6
-
+0.5
-
+0.5
ns
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| HDD64M72D18W-13B | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., with 184Pin-DIMM |
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