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參數(shù)資料
| 型號： | HD74HCT1G04 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | High speed CMOS inverter using silicon gate CMOS process |
| 中文描述： | 高速CMOS反相器采用硅柵CMOS工藝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 40K |
| 代理商： | HD74HCT1G04 |
HD74HCT1G04
5
Switching Characteristics
Item
Symbol T
a
= 25
°
C
Unit
Test Conditions
Min
Typ
Max
Output rise / fall time
t
TLH
t
THL
t
PLH
t
PHL
—
6
10
ns
Test circuit
Propagation delay time
—
7.5
12
ns
Test circuit
—
10
17
(C
L
= 15 pF, t
r
= t
f
= 6 ns, V
CC
= 5 V)
Item
Symbol
T
a
= 25
°
C
Min
T
a
= –40 to 85
°
C
Unit Test Conditions
Min
Max
V
CC
4.5
Typ
Max
Output rise / fall time
t
TLH
t
THL
t
PLH
t
PHL
C
IN
C
PD
—
14
25
—
31
ns
Test circuit
Propagation delay time
4.5
—
11.2
16
—
20
ns
Test circuit
4.5
—
16.4
27
—
31
Input capacitance
—
—
2.5
5
—
5
pF
Equivalent capacitance
(C
L
= 50 pF, t
r
= t
f
= 6 ns)
Note:
C
is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
—
—
10
—
—
—
pF
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