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參數(shù)資料
| 型號： | HD74HCT1G04 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | High speed CMOS inverter using silicon gate CMOS process |
| 中文描述： | 高速CMOS反相器采用硅柵CMOS工藝 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 40K |
| 代理商： | HD74HCT1G04 |
HD74HCT1G04
3
Absolute Maximum Ratings
Item
Symbol
Ratings
Unit
Test Conditions
Supply voltage range
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
or I
GND
–0.5 to 7.0
V
Input voltage range
*1
–0.5 to V
CC
+ 0.5
–0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
25
V
Output voltage range
*1, 2
V
Output : H or L
Input clamp current
mA
V
I
< 0 or V
I
> V
CC
V
O
< 0 or V
O
>V
CC
V
O
= 0 to V
CC
Output clamp current
mA
Continuous output current
mA
Continuous current through
V
CC
or GND
Maximum power dissipation
at Ta = 25
°
C (in still air)
*3
mA
P
T
200
mW
Storage temperature
Notes:
Tstg
–65 to 150
°
C
The absolute maximum ratings are values which must not individually be exceeded, and
furthermore, no two of which may be realized at the same time.
1. The input and output voltage ratings may be exceeded if the input and output clamp-current
ratings are observed.
2. This value is limited to 5.5 V maximum.
3. The maximum package power dissipation was caluculated using a junction temperature of
150
°
C.
Recommended Operating Conditions
Item
Symbol
Min
Max
Unit
Test Conditions
Supply voltage range
V
CC
V
I
V
O
I
OL
I
OH
t
r
, t
f
4.5
5.5
V
Input voltage range
0
5.5
V
Output voltage range
0
V
CC
2
V
Output current
—
mA
V
CC
= 4.5 to 5.5 V
V
CC
= 4.5 to 5.5 V
V
CC
= 4.5 to 5.5 V
—
–2
Input rise / fall time
(0.3 V to 2.7 V)
0
500
ns
Operating temperature
Note:
Unused or floating inputs must be held high or low.
Ta
–40
85
°
C
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