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參數(shù)資料
| 型號(hào)： | HCTS10DMSR |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened Triple 3-Input NAND Gate |
| 中文描述： | HCT SERIES, TRIPLE 3-INPUT NAND GATE, CDIP14 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HCTS10DMSR |
8
HCTS10MS
Spec Number
518778
Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
2.20 x 2.24mm
METALLIZATION:
Type: SiAl
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100nm
4 x 4 mils
Metallization Mask Layout
HCTS10MS
A1
(1)
VCC
(14)
C1
(13)
B1 (2)
A2 (3)
B2 (4)
C2 (5)
(6)
Y2
(7)
GND
(8)
Y3
(9) A3
(10) B3
(11) C3
(12) Y1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HCTS10HMSR | Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10K | Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10KMSR | Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10MS | Quadruple 2-Input Exclusive-OR Gates 20-LCCC -55 to 125 |
| HCTS112D | Quadruple 2-Input Exclusive-OR Gates 14-CDIP -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCTS10HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10KMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS112D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual JK Flip-Flop |
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