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參數(shù)資料
| 型號： | HCTS10DMSR |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened Triple 3-Input NAND Gate |
| 中文描述： | HCT SERIES, TRIPLE 3-INPUT NAND GATE, CDIP14 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HCTS10DMSR |
3
Specifications HCTS10MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
22
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
53
pF
1
+125
o
C, -55
o
C
-
71
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C, -55
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current (Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5Vand 5.5V, VIH = VCC/2V,
VIL = 0.8V, IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
+25
o
C
-
-
-
Input to Output
TPHL
VCC = 4.5V
+25
o
C
2
24
ns
TPLH
+25
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
518778
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| HCTS10HMSR | Radiation Hardened Triple 3-Input NAND Gate |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HCTS10HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10KMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS10MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCTS112D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual JK Flip-Flop |
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