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參數(shù)資料
| 型號(hào)： | HCPL-J314 |
| 英文描述： | 0.4 Amp Output Current IGBT Gate Drive Optocoupler(0.4 放大輸出電流 IGBT門驅(qū)動(dòng)光耦合器) |
| 中文描述： | 0.4安培輸出電流IGBT柵極驅(qū)動(dòng)光電耦合器（0.4放大輸出電流IGBT的門驅(qū)動(dòng)光耦合器） |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 235K |
| 代理商： | HCPL-J314 |
7
Switching Specifications (AC)
Over recommended operating conditions unless otherwise specified.
Test
Parameter
Symbol
t
PLH
Min.
0.1
Typ.
0.2
Max.
0.7
Units
μ
s
Conditions
Rg = 47
,
Cg = 3 nF,
f = 10 kHz,
Duty Cycle =
50%,
I
F =
8 mA,
V
CC
= 30 V
Fig.
10,11,
12,13,
14,17
Note
14
Propagation Delay Time to
High Output Level
Propagation Delay Time to
Low Output Level
Propagation Delay
Difference Between Any
Two Parts or Channels
Rise Time
Fall Time
Output High Level Common
Mode Transient Immunity
Output Low Level Common
Mode Transient Immunity
t
PHL
0.1
0.3
0.7
μ
s
PDD
-0.5
0.5
μ
s
10
t
R
t
F
50
50
30
ns
ns
|CM
H
|
10
kV/
μ
s
T
A
= 25
°
C,
V
CM
= 1.5 kV
18
11
|CM
L
|
10
30
kV/
μ
s
18
12
Package Characteristics
For each channel unless otherwise specified.
Test
Parameter
Symbol
V
ISO
Min.
3750
Typ.
Max.
Units
V
rms
Conditions
T
A
=25
°
C,
RH<50% for
1 min.
Fig.
Note
8,9
Input-Output Momentary
Withstand Voltage
Output-Output Momentary
Withstand Voltage
Input-Output Resistance
Input-Output Capacitance
V
O-O
1500
V
rms
15
R
I-O
C
I-O
10
12
1.2
pF
V
I-O
=500 V
Freq=1 MHz
9
Notes:
1. Derate linearly above 70
°
C free air temperature at a rate of 0.3 mA/
°
C.
2. Maximum pulse width = 10
μ
s, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs
with I
O
peak minimum = 0.4 A. See Application section for additional details on limiting I
OL
peak.
3. Derate linearly above 85
°
C, free air temperature at the rate of 4.0 mW/
°
C.
4. Input power dissipation does not require derating.
5. Maximum pulse width = 50
μ
s, maximum duty cycle = 0.5%.
6. In this test, V
OH
is measured with a DC load current. When driving capacitive load V
OH
will approach V
CC
as I
OH
approaches zero
amps.
7. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
8. In accordance with UL 1577, each HCPL-J314 optocoupler is proof tested by applying an insulation test voltage
≥
5000 V
rms
for
1 second (leakage detection current limit I
I-O
≤
5
μ
A). This test is performed before 100% production test for partial discharge
(method B) shown in the VDE 0884 Insulation Characteristics Table, if applicable.
9. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
10. PDD is the difference between t
PHL
and t
PLH
between any two parts or channels under the same test conditions.
11. Common mode transient immunity in the high state is the maximum tolerable |dVcm/dt| of the common mode pulse V
CM
to
assure that the output will remain in the high state (i.e. Vo > 6.0 V).
12. Common mode transient immunity in a low state is the maximum tolerable |dV
CM
/dt| of the common mode pulse, V
CM
, to assure
that the output will remain in a low state (i.e. Vo < 1.0 V).
13. This load condition approximates the gate load of a 1200 V/25 A IGBT.
14. For each channel. The power supply current increases when operating frequency and Qg of the driven IGBT increases.
15. Device considered a two terminal device: Channel one output side pins shorted together, and channel two output side pins shorted
together.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCPL-J314#300 | 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-J314#500 | 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-J314-000E | 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-J314-300E | 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-J314-500E | 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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