參數(shù)資料
型號(hào): HCPL-J314
英文描述: 0.4 Amp Output Current IGBT Gate Drive Optocoupler(0.4 放大輸出電流 IGBT門(mén)驅(qū)動(dòng)光耦合器)
中文描述: 0.4安培輸出電流IGBT柵極驅(qū)動(dòng)光電耦合器(0.4放大輸出電流IGBT的門(mén)驅(qū)動(dòng)光耦合器)
文件頁(yè)數(shù): 12/16頁(yè)
文件大?。?/td> 235K
代理商: HCPL-J314
12
Selecting the Gate Resistor (Rg)
Step 1:
Calculate R
g
minimum from the I
OL
peak specification. The
IGBT and Rg in Figure 19 can be analyzed as a simple RC circuit with a
voltage supplied by the HCPL-J314.
Rg
V
CC
– V
OL
I
OLPEAK
The V
OL
value of 5 V in the previous equation is the V
OL
at the peak
current of 0.6A. (See Figure 6).
Step 2:
Check the HCPL-J314 power dissipation and increase Rg if
necessary. The HCPL-J314 total power dissipation (P
T
) is equal to the
sum of the emitter power (P
E
) and the output power (P
O
).
P
T
= P
E
+ P
O
P
E
= I
F
V
F
Duty Cycle
P
O
= P
O(BIAS)
+ P
O
(
SWITCHING
)
= I
CC
V
CC
+ E
SW
(
R
g
,Q
g)
f
= (
I
CCBIAS
+
K
ICC
Q
g
f
)
V
CC
+
E
SW
(
R
g
,Q
g)
f
where
K
ICC
Q
g
f
is the increase in I
CC
due to switching and K
ICC
is a
constant of 0.001 mA/(nC*kHz). For the circuit in Figure 19 with I
F
(worst case) = 10 mA, Rg = 32
, Max Duty Cycle = 80%,
Qg = 100 nC, f = 20 kHz and T
AMAX
= 85
°
C:
P
E
= 10
mA
1.8
V
0.8 = 14
mW
P
O
= (3
mA
+ (0.001
mA
/(
nC
kHz
))
20
kHz
100
nC
)
24
V
+
0.4
μ
J
20
kHz
= 128
mW
< 260
mW
(
P
O
(
MAX
)
@ 85
°
C
)
The value of 3 mA for I
CC
in the previous equation is the max. I
CC
over
entire operating temperature range.
Since P
O
for this case is less than P
O(MAX)
, Rg = 32
is alright for the
power dissipation.
= 24
V
– 5
V
0.6
A
= 32
Figure 20. Energy Dissipated in the
HCPL-J314 and for Each IGBT
Switching Cycle.
LED Drive Circuit
Considerations for Ultra
High CMR Performance
Without a detector shield, the
dominant cause of optocoupler
CMR failure is capacitive
coupling from the input side of
the optocoupler, through the
package, to the detector IC
as shown in Figure 21. The
HCPL-J314 improves CMR
performance by using a detector
IC with an optically transparent
Faraday shield, which diverts the
capacitively coupled current away
from the sensitive IC circuitry.
However, this shield does not
eliminate the capacitive coupling
between the LED and opto-
coupler pins 5-8 as shown in
Figure 22. This capacitive
coupling causes perturbations in
the LED current during common
mode transients and becomes the
major source of CMR failures for
a shielded optocoupler. The main
design objective of a high CMR
LED drive circuit becomes
keeping the LED in the proper
state (on or off) during common
mode transients. For example,
the recommended application
circuit (Figure 19), can achieve
10 kV/
μ
s CMR while minimizing
component complexity.
Techniques to keep the LED in
the proper state are discussed in
the next two sections.
E
0
0
Rg – GATE RESISTANCE –
100
1.5
20
4.0
40
1.0
60
80
3.5
Qg = 50 nC
Qg = 100 nC
Qg = 200 nC
Qg = 400 nC
3.0
2.0
0.5
2.5
相關(guān)PDF資料
PDF描述
HCPL-J454 High CMR, High Speed Optocouplers(高CMR,高速光耦合器)
HCPL-0454 High CMR, High Speed Optocouplers(高CMR,高速光耦合器)
HCPL-J456 Intelligent Power Module and Gate Drive Interface Optocouplers(智能功率模塊和門(mén)驅(qū)動(dòng)接口光耦合器)
HCPL-0466 Intelligent Power Module and Gate Drive Interface Optocouplers(智能功率模塊和門(mén)驅(qū)動(dòng)接口光耦合器)
HCPL-M454 Ultra High CMR, Small Outline,5 Lead, High Speed Optocoupler(超高CMR,小型,5引線,高速光耦合器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HCPL-J314#300 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
HCPL-J314#500 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
HCPL-J314-000E 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
HCPL-J314-300E 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
HCPL-J314-500E 功能描述:高速光耦合器 0.4A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube