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參數(shù)資料
| 型號(hào)： | HBFP-0450 |
| 英文描述： | Silicon Bipolar Transistors(硅雙極型晶體管) |
| 中文描述： | 硅雙極晶體管（硅雙極型晶體管） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | HBFP-0450 |
C. Example of Failure Rate Calculation
At 100
°
C for a device operating 8 hours a day, 5 days a week, the percent utilization is:
% Utilization = (8 hours/day) x (5 days/week)
÷
168 hours/week
25%
Then at 100
°
C, the point failure rate per year is:
(8.4 x 10
-8
/hr.) x (25%) x (8760 hours/year) = 1.8 x 10
-2
% per year
Likewise, the 90% confidence level failure rate per year is:
(1.9 x 10
-7
/hr.) x (25%) x (8760 hours/year) = 4.2 x 10
-2
% per year
Test Name
Test Conditions
Duration
Number of Failed/Sample Size
Thermal Shock
-65
°
C/+150
°
C, 5 min. dwell
1000 cycles
0/460
Temp Cycling
-65
°
C/+150
°
C, 10 min. dwell
2000 cycles
1000 cycles
0/227
0/228
Moisture Resistance (WHTRB)
85
°
C/RH 85%, V
cbo
= 16.0 V
1000 hrs
0/176
Moisture Resistance (WHTOL)
85
°
C/RH 85%, V
ce
= 2 V, 20 mA
2000 hrs
0/156
Autoclave
121
°
C, 15 psig, 100% RH
96 hrs
0/456
Resistance to Solvents
3 solvent groups
—
0/22
Solderability
245
°
C, 5 seconds
8 hrs steam aging
0/22
2.0 Environmental Tests
3.0 Electrostatic Discharge
Test Name
Referance
Results
Human Body Model
EIA/JESD22-A114-A
Class 1
Machine Model
EIA/JESD22-A115-A
Class A
Class 1 is ESD voltage level <2000V, Class 2 is voltage level between
2000V and 4000V, Class 3 is voltage level >4000V.
Class A is ESD voltage level <200V, Class B is voltage level between
200V and 400V, Class C is voltage level >400V.
4.0 Flammability Rating
The device is designed to meet the UL category D
Note:
Preconditioning per JESD22-A113-A class 1, was performed on all the devices
before the reliability tests.
www.hp.com/go/rf
For technical assistance or the location of
your nearest Hewlett-Packard sales
office, distributor or representative call:
Americas/Canada:
1-800-235-0312 or
408-654-8675
Far E ast/Australasia:
Call your local HP
sales office.
J apan:
(81 3) 3335-8152
E urope:
Call your local HP sales office.
Data subject to change.
Copyright 1999 Hewlett-Packard Co.
Obsoletes 5968-1409E
5968-3885E (2/99)
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PDF描述 |
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| HBFP-0420-BLK | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR1 | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR2 | High Performance Isolated Collector Silicon Bipolar Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HBFP-0450-TR1 | 制造商:HEWLETT 功能描述: |
| HBFP-0450-TR3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 100MA I(C) | SOT-343 |
| HBFR113-S | 制造商:SEOUL 制造商全稱:Seoul Semiconductor 功能描述:Surface-mounted chip LED device |
| HBFR-1602 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Telecomm/Datacomm |
| HBFR-1604 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Telecomm/Datacomm |
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