參數(shù)資料
型號： HBFP-0405-TR1
廠商： Electronic Theatre Controls, Inc.
英文描述： High Performance Isolated Collector Silicon Bipolar Transistor
中文描述： 高性能隔離采集硅雙極晶體管
文件頁數(shù)： 4/10頁
文件大?。?/td> 85K
代理商： HBFP-0405-TR1
4
HBFP-0405 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 5 mA, T
C
= 25
°
C
S
11
GHz
Mag
Ang
0.1
0.819
-6.2
0.5
0.775
-30.3
0.9
0.704
-52.4
1.0
0.681
-57.2
1.5
0.585
-81.5
1.8
0.531
-94.5
2.0
0.500
-102.7
2.5
0.440
-121.3
3.0
0.392
-138.9
3.5
0.360
-154.1
4.0
0.334
-168.9
4.5
0.315
177.0
5.0
0.302
162.5
5.5
0.295
148.1
6.0
0.301
133.7
6.5
0.311
120.4
7.0
0.327
105.9
7.5
0.346
94.0
8.0
0.369
83.4
8.5
0.392
74.1
9.0
0.410
65.6
9.5
0.428
56.9
10.0
0.446
48.2
Freq.
S
21
Mag
12.630
11.912
10.664
10.308
8.689
7.817
7.306
6.208
5.362
4.716
4.214
3.814
3.491
3.229
3.010
2.827
2.668
2.520
2.389
2.261
2.141
2.038
1.937
S
12
Mag
0.003
0.016
0.027
0.029
0.039
0.044
0.047
0.053
0.057
0.061
0.066
0.070
0.075
0.079
0.084
0.089
0.095
0.101
0.106
0.110
0.116
0.120
0.124
S
22
dB
22.0
21.5
20.6
20.3
18.8
17.9
17.3
15.9
14.6
13.5
12.5
11.6
10.9
10.2
9.6
9.0
8.5
8.0
7.6
7.1
6.6
6.2
5.7
Ang
174.5
153.5
134.9
130.7
111.9
102.5
96.7
83.7
72.4
62.3
52.9
44.3
35.7
27.4
19.0
10.8
2.6
-5.8
-13.8
-21.9
-29.9
-38.0
-46.0
dB
-50.2
-36.2
-31.5
-30.8
-28.1
-27.2
-26.6
-25.6
-24.8
-24.2
-23.6
-23.1
-22.5
-22.0
-21.5
-21.0
-20.5
-20.0
-19.5
-19.1
-18.7
-18.4
-18.1
Ang
87.8
77.1
67.3
64.9
54.0
49.0
46.0
39.9
34.6
30.4
26.5
23.0
19.0
15.1
11.1
6.4
2.1
-3.0
-7.7
-12.8
-18.0
-23.1
-28.5
Mag
0.990
0.959
0.897
0.875
0.783
0.733
0.703
0.641
0.597
0.566
0.541
0.528
0.513
0.499
0.484
0.463
0.439
0.414
0.389
0.370
0.357
0.345
0.334
Ang
-2.8
-13.4
-23.3
-25.5
-35.2
-40.1
-43.0
-49.4
-55.0
-59.7
-64.2
-68.6
-73.0
-77.0
-82.0
-86.1
-90.5
-95.4
-101.6
-108.5
-115.8
-122.3
-127.9
HBFP-0405 Noise Parameters:
V
CE
= 2 V, I
C
= 5 mA
Freq.
GHz
F
min
dB
Γ
opt
R
N
/50
17.0
16.8
16.2
15.6
15.3
13.8
13.1
12.6
12.0
11.8
11.3
12.0
12.7
13.5
15.2
17.0
19.7
22.8
26.7
30.9
35.2
G
a
dB
Mag
Ang
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
1.36
1.38
1.46
1.52
1.55
1.65
1.73
1.79
1.93
1.99
2.08
2.18
2.32
2.37
2.48
2.56
2.69
2.85
2.99
3.10
3.12
0.386
0.375
0.333
0.305
0.292
0.246
0.208
0.187
0.153
0.123
0.104
0.065
0.051
0.068
0.101
0.133
0.177
0.212
0.246
0.282
0.314
2.8
5.0
17.7
25.5
31.9
50.0
59.9
73.6
85.6
100.2
119.5
141.5
-169.0
-129.9
-96.3
-82.9
-71.2
-62.8
-54.1
-46.1
-37.3
25.59
24.76
21.56
20.12
19.29
17.61
16.04
14.81
13.76
12.90
12.12
11.45
10.87
10.32
9.82
9.33
8.92
8.50
8.10
7.77
7.41
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
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