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參數(shù)資料
| 型號： | HBD437D |
| 廠商： | HSMC CORP. |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補性的芯片功率晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | HBD437D |
HI-SINCERITY
MICROELECTRONICS CORP.
HBD437D
COMPLEMENTARY SILICON POWER TRANSISTORS
Spec. No. : HD200201
Issued Date : 2001.04.01
Revised Date : 2005.08.16
Page No. : 1/4
HBD437D
HSMC Product Specification
Description
The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic
package, intented for use in medium power linear and switching applications. The
complementary PNP type is HBD438D.
Absolute Maximum Ratings
(T
A
=25
°
C)
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
Parametor
Value
45
45
45
5
4
7
Unit
V
V
V
V
A
A
Collector-Base Voltage (I
E
=0)
Collector-Emitter Voltage (V
BE
=0)
Collector-Emitter Voltage (I
B
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current
Collector Peak Current (t
≤
10ms)
Base Current
1
A
W
T
C
=25
°
C
T
A
=25
°
C
20
P
D
Total Dissipation at
1.5
W
T
stg
T
J
Storage Temperature
-55 to 150
°
C
°
C
Max. Operating Junction Temperature
150
Thermal Data
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Max.
5
°
C/W
°
C/W
Thermal Resistance Junction-ambient
Max.
83
Electrical Characteristics
(T
A
=25
°
C, unless otherwise specified)
Symbol
I
CBO
I
CES
I
EBO
*V
CEO(sus)
*V
CE(sat)
Parameter
Test Conditions
V
CB
=45V
V
CE
=45V
V
EB
=5V
I
C
=100mA, I
B
=0
I
C
=2A, I
B
=0.2A
I
C
=10mA,V
CE
=5V
I
C
=2A, V
CE
=1V
I
C
=10mA, V
CE
=5V
I
C
=0.5A, V
CE
=1V
I
C
=2A, V
CE
=1V
I
C
=0.5A, V
CE
=1V
I
C
=0.25A, V
CE
=1V
Min.
-
-
-
45
-
-
-
30
85
40
-
3
Typ.
-
-
-
-
0.4
0.58
-
130
140
-
-
-
Max.
100
100
1
-
0.6
-
1.2
-
-
-
1.4
-
Unit
uA
uA
mA
V
V
V
V
Collector Cut-off Current (I
E
=0)
Collector Cut-off Current (V
BE
=0)
Emitter Cut-off Current (I
C
=0)
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
*V
BE
Base-Emitter Voltage
*h
FE
DC Current Gain
*h
FE1
/h
FE2
f
T
Matched Pair
Transition Frequency
MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-126ML
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HBD437T | 制造商:HSMC 制造商全稱:HSMC 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD438T | 制造商:HSMC 制造商全稱:HSMC 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD480-500-200 | 制造商:JSP 功能描述:SIGN A FRAME CAUTION WET PAINT |
| HBD675 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HBD677 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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