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參數(shù)資料
| 型號： | HBCW65C |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 25K |
| 代理商： | HBCW65C |
HI-SINCERITY
MICROELECTRONICS CORP.
HBCW65C
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6808
Issued Date : 1998.02.01
Revised Date : 2002.10.24
Page No. : 1/3
HBCW65C
HSMC Product Specification
Description
The HBCW65C is a general purpose transistor.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -65 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 32 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 800 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
60
32
5
-
-
-
-
-
80
180
250
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
170
8
Max.
-
-
-
20
20
700
300
2.0
-
-
630
-
-
-
Unit
V
V
V
nA
nA
mV
mV
V
Test Conditions
IC=10uA
IC=10mA
IE=10uA
VCB=32V, IE=0
VEB=4V, IC=0
IC=500mA, IB=50mA
IC=100mA, IB=10mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1.0MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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