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參數(shù)資料
| 型號(hào)： | HB54A2568KN-A75B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 256MB DDR SDRAM S.O.DIMM |
| 中文描述： | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | SODIMM-200 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 514K |
| 代理商： | HB54A2568KN-A75B |
HB54A2568KN-A75B/B75B/10B
Preliminary Data Sheet E0148H20 (Ver. 2.0)
14
Pin Capacitance (TA = 25°C, VCC, VCCQ = 2.5V ± 0.2V)
[Parameter
Symbol
Pins
min.
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS,
/WE
CKE, /S CK, /CK
60
pF
1
Input capacitance
CI2
40
pF
1
Data and DQS input/output
capacitance
Notes: 1. These parameters are measured on conditions: f = 100MHz, VOUT = VCCQ/2,
VOUT = 0.2V.
2. Dout circuits are disabled.
CO
DQ, DQS, DM
27
pF
1, 2
Timing Parameter Measured in Clock Cycle for Unbuffered DIMM
Number of clock cycle
Parameter
Symbol
min.
max.
Write to pre-charge command delay (same bank)
tWPD
3 + BL/2
Read to pre-charge command delay (same bank)
tRPD
BL/2
Write to read command delay (to input all data)
tWRD
2 + BL/2
Burst stop command to write command delay
(CL = 2)
tBSTW
2
(CL = 2.5)
tBSTW
3
Burst stop command to DQ High-Z
(CL = 2)
tBSTZ
2
(CL = 2.5)
tBSTZ
2.5
Read command to write command delay (to output all data)
(CL = 2)
tRWD
2 + BL/2
(CL = 2.5)
tRWD
3 + BL/2
Pre-charge command to High-Z
(CL = 2)
tHZP
2
(CL = 2.5)
tHZP
2.5
Write command to data in latency
tWCD
1
Write recovery
tWR
2
DM to data in latency
tDMD
0
Register set command to active or register set command
tMRD
2
Self refresh exit to non-read command
tSNR
10
Self refresh exit to read command
tSRD
200
Power down entry
tPDEN
1
Power down exit to command input
tPDEX
1
CKE minimum pulse width
tCKEPW
1
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PDF描述 |
|---|---|
| HB54A2568KN-B75B | 256MB DDR SDRAM S.O.DIMM |
| HB54A5129F1U-B75B | 512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U | 512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U-10B | 512MB Registered DDR SDRAM DIMM |
| HB54A5129F1U-A75B | 512MB Registered DDR SDRAM DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB54A2568KN-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM S.O.DIMM |
| HB54A2569F1 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A2569F1-10B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A2569F1-A75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
| HB54A2569F1-B75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM |
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