- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370430 > HB52RF649DC-75B (ELPIDA MEMORY INC) 512MB Unbuffered SDRAM S.O.DIMM PDF資料下載
參數(shù)資料
| 型號： | HB52RF649DC-75B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512MB Unbuffered SDRAM S.O.DIMM |
| 中文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| 封裝： | ZIG ZAG DUAL TAB SOCKET TYPE, SODIMM-144 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 464K |
| 代理商： | HB52RF649DC-75B |
HB52RF649DC-B, HB52RD649DC-B
Data Sheet E0223H30 (Ver. 3.0)
11
Notes: 1. AC measurement assumes tT = 1ns. Reference level for timing of input signals is 1.5V.
2. Access time is measured at 1.5V. Load condition is CL = 50pF.
3. tLZ (min.) defines the time at which the outputs achieves the low impedance state.
4. tHZ (max.) defines the time at which the outputs achieves the high impedance state.
5. tCES defines CKE setup time to CK rising edge except power down exit command.
Test Conditions
Input and output timing reference levels: 1.5V
Input waveform and output load: See following figures
tT
2.4V
0.4V
0.8V
2.0V
input
t
T
I/O
CL
Input waveform and output load
相關PDF資料 |
PDF描述 |
|---|---|
| HB52RF649DC-75BL | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RF649DC-B | 512MB Unbuffered SDRAM S.O.DIMM |
| HB54A2568KN | 256MB DDR SDRAM S.O.DIMM |
| HB54A2568KN-10B | 256MB DDR SDRAM S.O.DIMM |
| HB54A2568KN-A75B | 256MB DDR SDRAM S.O.DIMM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RF649DC-75BL | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
| HB52RF649DC-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered SDRAM S.O.DIMM |
| HB52RF649E1U-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword ?? 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M ?? 4 Components) PC133 SDRAM |
| HB5-3 | 制造商:POWER-ONE 制造商全稱:Power-One 功能描述:Linear Power Supplies Data Sheet |
| HB5-3/OVP | 制造商:Power-One 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。