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參數(shù)資料
| 型號(hào)： | HB52E649E12 |
| 廠商： | Elpida Memory, Inc. |
| 元件分類： | 熱敏電阻 |
| 英文描述： | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| 中文描述： | 注冊(cè)使用512 MB SDRAM的內(nèi)存64 Mword】72位，100 MHz的內(nèi)存總線，1銀模塊（18件64 M】4組件）PC100的SDRAM內(nèi)存 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 147K |
| 代理商： | HB52E649E12 |
HB52E649E12-A6B/B6B
Data Sheet E0020H20
6
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
22
SDRAM device attributes:
General
0
0
0
0
1
1
1
0
0E
V
CC
± 10%
23
SDRAM cycle time
(2nd highest
CE
latency)
(-A6B) 10 ns
1
0
1
0
0
0
0
0
A0
CL = 2
*
7
(-B6B) Undefined
0
0
0
0
0
0
0
0
00
24
SDRAM access from Clock
(2nd highest
CE
latency)
(-A6B) 6 ns
0
1
1
0
0
0
0
0
60
(-B6B) Undefined
0
0
0
0
0
0
0
0
00
25
SDRAM cycle time
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
26
SDRAM access from Clock
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
27
Minimum row precharge time
0
0
0
1
0
1
0
0
14
20 ns
28
Row active to row active min
RE
to
CE
delay min
Minimum
RE
pulse width
0
0
0
1
0
1
0
0
14
20 ns
29
0
0
0
1
0
1
0
0
14
20 ns
30
0
0
1
1
0
0
1
0
32
50 ns
31
Density of each bank on module 1
0
0
0
0
0
0
0
80
1 bank
512M byte
32
Address and command signal
input setup time
0
0
1
0
0
0
0
0
20
2 ns*
7
33
Address and command signal
input hold time
0
0
0
1
0
0
0
0
10
1 ns*
7
34
Data signal input setup time
0
0
1
0
0
0
0
0
20
2 ns*
7
35
Data signal input hold time
0
0
0
1
0
0
0
0
10
1 ns*
7
36 to 61 Superset information
0
0
0
0
0
0
0
0
00
Future use
62
SPD data revision code
0
0
0
1
0
0
1
0
12
Rev. 1.2A
63
Checksum for bytes 0 to 62
(-A6B)
0
0
1
0
0
0
1
1
23
35
(-B6B)
0
0
1
0
0
0
0
1
21
33
64
Manufacturer’s JEDEC ID code
0
0
0
0
0
1
1
1
07
HITACHI
65 to 71 Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00
72
Manufacturing location
×
×
×
×
×
×
×
×
××
*
3
(ASCII-
8bit code)
73
Manufacturer
’
s part number
0
1
0
0
1
0
0
0
48
H
74
Manufacturer
’
s part number
0
1
0
0
0
0
1
0
42
B
75
Manufacturer
’
s part number
0
0
1
1
0
1
0
1
35
5
76
Manufacturer
’
s part number
0
0
1
1
0
0
1
0
32
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F169E1 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52F649E1 | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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