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參數(shù)資料
| 型號： | HB52E649E12 |
| 廠商： | Elpida Memory, Inc. |
| 元件分類： | 熱敏電阻 |
| 英文描述： | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| 中文描述： | 注冊使用512 MB SDRAM的內(nèi)存64 Mword】72位，100 MHz的內(nèi)存總線，1銀模塊（18件64 M】4組件）PC100的SDRAM內(nèi)存 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HB52E649E12 |
HB52E649E12-A6B/B6B
Data Sheet E0020H20
13
Relationship Between Frequency and Minimum Latency
Parameter
HB52E649E12
Frequency (MHz)
-A6B/B6B
t
CK
(ns)
Active command to column command (same bank)
Symbol
PC100
Symbol 10
Notes
I
RCD
I
RC
2
1
Active command to active command (same bank)
7
= [I
RAS
+ I
RP
]
1
Active command to precharge command (same bank)
I
RAS
I
RP
I
DPL
5
1
Precharge command to active command (same bank)
2
1
Write recovery or data-in to precharge command
(same bank)
Tdpl
1
1
Active command to active command (different bank)
I
RRD
I
SREX
I
APW
2
1
Self refresh exit time
Tsrx
2
2
Last data in to active command
(Auto precharge, same bank)
Tdal
3
= [I
DPL
+ I
RP
]
Self refresh exit to command input
I
SEC
7
= [I
RC
]
3
Precharge command to high impedance
(
CE
latency = 3)
(
CE
latency = 4)
I
HZP
I
HZP
I
APR
Troh
3
Troh
4
Last data out to active command (auto precharge)
(same bank)
0
Last data out to precharge (early precharge)
(
CE
latency = 3)
(
CE
latency = 4)
I
EP
–
2
I
EP
I
CCD
I
WCD
I
DID
I
DOD
I
CLE
I
RSA
I
CDD
I
PEC
–
3
Column command to column command
Tccd
1
Write command to data in latency
Tdwd
1
DQMB to data in
Tdqm
1
DQMB to data out
Tdqz
3
CKE to CK disable
Tcke
2
Register set to active command
S
to command disable
Tmrd
1
0
Power down exit to command input
Notes: 1. I
RCD
to I
RRD
are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
1
相關PDF資料 |
PDF描述 |
|---|---|
| HB52E649E12-A6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F169E1 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52F649E1 | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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