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參數(shù)資料
| 型號： | HB52E649E12-A6B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| 中文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, 6.9 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HB52E649E12-A6B |
HB52E649E12-A6B/B6B
Data Sheet E0020H20
5
Serial PD Matrix
*
1
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
0
Number of bytes used by
module manufacturer
1
0
0
0
0
0
0
0
80
128
1
Total SPD memory size
0
0
0
0
1
0
0
0
08
256 byte
2
Memory type
0
0
0
0
0
1
0
0
04
SDRAM
3
Number of row addresses bits
0
0
0
0
1
1
0
1
0D
13
4
Number of column addresses
bits
0
0
0
0
1
0
1
1
0B
11
5
Number of banks
0
0
0
0
0
0
0
1
01
1
6
Module data width
0
1
0
0
1
0
0
0
48
72 bit
7
Module data width (continued)
0
0
0
0
0
0
0
0
00
0 (+)
8
Module interface signal levels
0
0
0
0
0
0
0
1
01
LVTTL
9
SDRAM cycle time
(highest
CE
latency)
10 ns
1
0
1
0
0
0
0
0
A0
CL = 3
10
SDRAM access from Clock
(highest
CE
latency)
6 ns
0
1
1
0
0
0
0
0
60
*
7
11
Module configuration type
0
0
0
0
0
0
1
0
02
ECC
12
Refresh rate/type
1
0
0
0
0
0
1
0
82
Normal
(7.8125 μs)
Self refresh
13
SDRAM width
0
0
0
0
0
1
0
0
04
64M
×
4
×
4
14
Error checking SDRAM width
0
0
0
0
0
1
0
0
04
15
SDRAM device attributes:
minimum clock delay for back-to-
back random column addresses
0
0
0
0
0
0
0
1
01
1 CLK
16
SDRAM device attributes:
Burst lengths supported
0
0
0
0
1
1
1
1
0F
1, 2, 4, 8
17
SDRAM device attributes:
number of banks on SDRAM
device
0
0
0
0
0
1
0
0
04
4
18
SDRAM device attributes:
CE
latency
(-A6B)
0
0
0
0
0
1
1
0
06
2/3
(-B6B)
0
0
0
0
0
1
0
0
04
3
19
SDRAM device attributes:
S
latency
0
0
0
0
0
0
0
1
01
0
20
SDRAM device attributes:
W
latency
0
0
0
0
0
0
0
1
01
0
21
SDRAM device attributes
0
0
0
1
1
1
1
1
1F
Registered
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F169E1 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52F649E1 | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1-75B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52E89E1P-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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