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參數(shù)資料
| 型號： | HB52E649E12-A6B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| 中文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, 6.9 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HB52E649E12-A6B |
HB52E649E12-A6B/B6B
Data Sheet E0020H20
10
DC Characteristics
(Ta = 0 to 55
°
C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V)
HB52E649E12
-A6B
-B6B
Parameter
Symbol
Min
Max
Min
Max
Unit
Test conditions
Notes
Operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC1
I
CC1
I
CC2P
—
2220
—
—
mA
Burst length = 1
t
RC
= min
1, 2, 3
—
2220
—
2220
mA
Standby current in power
down
—
564
—
564
mA
CKE = V
IL
, t
CK
= 12
ns
6
Standby current in power
down (input signal stable)
I
CC2PS
—
546
—
546
mA
CKE = V
IL
, t
CK
=
∞
7
Standby current in non
power down
I
CC2N
—
870
—
870
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12
ns
CKE,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
4
Active standby current in
power down
I
CC3P
—
582
—
582
mA
1, 2, 6
Active standby current in
non power down
I
CC3N
—
1050
—
1050
mA
1, 2, 4
Burst operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC4
I
CC4
I
CC5
I
CC6
—
2220
—
—
mA
1, 2, 5
—
2220
—
2220
mA
Refresh current
—
4470
—
4470
mA
Self refresh current
—
564
—
564
mA
V
IH
≥
V
–
0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
8
Input leakage current
I
LI
I
LO
–
10
10
–
10
10
μA
Output leakage current
–
10
10
–
10
10
μA
Output high voltage
V
OH
V
OL
2.4
—
2.4
—
V
I
OH
=
–
4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
—
0.4
—
0.4
V
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PDF描述 |
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| HB52E649E12-B6B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52E89E1P-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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