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參數(shù)資料
| 型號： | HAT3006R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel / P Channel Power MOS FET(N/P溝道MOEFET) |
| 中文描述： | 硅?頻道/ P通道功率MOS FET（N / P系列溝道MOEFET） |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 234K |
| 代理商： | HAT3006R |
HAT3006R
8
Main Characteristics (P channel)
1
0.2
0.5
0.1
0.02
0.05
0.01
–20
–0.2
–0.5
–1
–2
–5
–10
–10 V
V = –4 V
–40
0
40
80
120
160
0.20
0.16
0.12
0.08
0.04
0
I = –0.5, –1, –2 A
20
10
2
5
1
0.2
–0.2
0.5
–0.5
–1
–2
–5
–10 –20
–10 V
V = –4 V
–0.5, –1, –2 A
Tc = –25 °C
75 °C
25 °C
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
F
f
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
V = –10 V
Pulse Test
1000
200
100
20
500
10
–0.1
50
–0.2
Reverse Drain Current I (A)
–0.5
–1
–2
–5
–10
di / dt = 20 A / μs
V = 0, Ta = 25 °C
R
Body–Drain Diode Reverse
Recovery Time
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