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參數(shù)資料
| 型號： | HAT3006R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel / P Channel Power MOS FET(N/P溝道MOEFET) |
| 中文描述： | 硅?頻道/ P通道功率MOS FET（N / P系列溝道MOEFET） |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 234K |
| 代理商： | HAT3006R |
HAT3006R
2
Note: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Electrical Characteristics (N channel) (Ta = 25
°
C)
Note: 4. Pulse test
Electrical Characteristics (P channel) (Ta = 25
°
C)
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Pch
Note2
Pch
Note3
Tch
Tstg
2
3
150
– 55 to + 150
W
W
°
C
°
C
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
S
30
Gate to source breakdown voltage V
(BR)GS
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
—
—
1.0
—
—
5
—
—
—
—
—
—
—
—
—
—
—
—
0.03
0.05
8
560
380
170
30
270
40
65
0.9
45
±
10
10
2.0
0.045
0.08
—
—
—
—
—
—
—
—
1.4
—
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 4 A, V
GS
= 10 V
Note4
I
D
= 4 A, V
GS
= 4 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
GS
= 4 V, I
D
= 4 A
V
DD
@ 10 V
IF = 6.5 A, V
GS
= 0
Note4
IF = 6.5 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= – 10 mA, V
GS
= 0
S
– 30
Gate to source breakdown voltage V
(BR)GS
S
I
GSS
I
DSS
V
GS(off)
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
—
—
– 1.0
—
—
—
±
10
– 10
– 2.5
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= – 30 V, V
GS
= 0
V
DS
= –10 V,
I
D
= –1mA
Item
Symbol
Ratings
Nch
Unit
Pch
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