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參數(shù)資料
| 型號(hào)： | HAT1026R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | HAT1026R |
HAT1026R
4
–0.5
–0.4
–0.3
–0.2
–0.1
0
–2
–4
–6
–8
–10
I = –5 A
–1 A
–2 A
0.5
0.2
0.05
0.1
0.02
0.005
0.01
–0.2
–0.5
–1
–2
–5
–10 –20
0.10
0.08
0.06
0.04
0.02
–40
0
40
80
120
160
0
50
20
10
2
5
1
0.5
–0.2
–0.5
–1
–2
–5
–10 –20
25 °C
Tc = –25 °C
75 °C
I = –1, –2, –5 A
–1, –2, –5 A
V = –4 V
–10 V
V = –4 V
–10 V
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Case Temperature Tc (°C)
R
D
S
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
V = –10 V
Pulse Test
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| HAT1029R | Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1030T | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| HAT1031T | Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1033T | Silicon P Channel Power MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT1026R-EL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel Power MOSFET High Speed Power Switching |
| HAT1029R | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1030T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 3A I(D) | SO |
| HAT1031T | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1033T | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
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