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參數(shù)資料
| 型號(hào)： | HAT1026R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | HAT1026R |
HAT1026R
3
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
–100
–30
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–50
–40
–30
–20
–10
0
–2
–4
–6
–8
–10
–50
–40
–30
–20
–10
0
–2
–4
–6
–8
–10
Tc = –25°C
25°C
75°C
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
–8 V
–10V
–6 V
–5 V
Pulse Test
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
V = –10 V
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
–0.01–0.03
Ta = 25 °C
1 shot Pulse
1ms
PW=10ms
10 μs 100 μs
Operation in
this area is
limited by R
DS(on)
–4 V
–3.5 V
–3 V
V = –2.5 V
–4.5 V
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Noe4
DCOpeaion(PW<10s
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相關(guān)代理商/技術(shù)參數(shù) |
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| HAT1026R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOSFET High Speed Power Switching |
| HAT1029R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1030T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 3A I(D) | SO |
| HAT1031T | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1033T | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
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