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參數(shù)資料
| 型號： | HAL300SO |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 英文描述： | Differential Hall Effect Sensor IC |
| 中文描述： | 差分霍爾效應傳感器IC |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 131K |
| 代理商： | HAL300SO |
HAL300
11
Micronas
20
22
24
26
28
30
μ
A
102
V
OH
I
OH
V
100
10
–
1
10
–
2
10
–
3
10
–
4
10
–
5
101
V
DD
= 5 V
T
A
= 125
°
C
T
A
= 75
°
C
T
A
= 25
°
C
Fig. 20:
Typical output leakage current
versus output voltage
Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress to the package
can influence the magnetic parameters if the sensor is
used under back-biased applications. This piezo sensi-
tivity of the sensor IC cannot be completely compen-
sated for by the switching offset compensation tech-
nique.
For back-biased applications, the HAL320 is recom-
mended. In such cases, please contact our Application
Department. They will provide assistance in avoiding
applications which may induce stress to the ICs. This
stress may cause drifts of the magnetic parameters indi-
cated in this data sheet.
For electromagnetic immunity, it is recommended to ap-
ply a 4.7 nF capacitor between V
DD
(pin 1) and Ground
(pin 2). For automotive applications, a 220 series re-
sistor to pin 1 is recommended. Because of the I
DD
peak
at 4.1 V, the series resistor should not be greater than
270
. The series resistor and the capacitor should be
placed as close as possible to the IC.
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient tem-
perature T
A
).
T
J
= T
A
+
T
At static conditions, the following equations are valid:
–
for SOT-89A:
T = I
DD
* V
DD
* R
thJSB
–
for TO-92UA:
T = I
DD
* V
DD
* R
thJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
Test Circuits for Electromagnetic Compatibility
Test pulses V
EMC
corresponding to DIN 40839.
OUT
GND
3
2
1
V
DD
4.7 nF
V
EMC
V
P
R
V
220
R
L
1.2 k
20 pF
Fig. 21:
Test circuit 2: test procedure for class A
OUT
GND
3
2
1
V
DD
4.7 nF
V
EMC
R
V
220
R
L
680
Fig. 22:
Test circuit 1: test procedure for class C
相關PDF資料 |
PDF描述 |
|---|---|
| HAL300 | Differential Hall Effect Sensor IC |
| HAL320 | Differential Hall Effect Sensor IC |
| HAL509 | Hall Effect Sensor Family |
| HAL502A | Hall Effect Sensor Family |
| HAL502E | 400 POS B2B® FEMALE CONNECTOR W/3M |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HAL300SO-A | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Differential Hall Effect Sensor IC |
| HAL300SO-C | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Differential Hall Effect Sensor IC |
| HAL300SO-E | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Differential Hall Effect Sensor IC |
| HAL300UA | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Differential Hall Effect Sensor IC |
| HAL300UA-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Switch |
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