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參數(shù)資料
| 型號： | HAL114SF-E |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Hall Effect Sensor Family |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, -17-11mT, 0.13-0.28V, RECTANGULAR, SURFACE MOUNT |
| 封裝： | PLASTIC, SOT-89B, 4 PIN |
| 文件頁數(shù)： | 12/17頁 |
| 文件大?。?/td> | 131K |
| 代理商： | HAL114SF-E |
HAL115
12
Micronas
4.2. HAL115
The HAL115 is a bipolar switching sensor (see Fig. 4–5).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
– switching type: bipolar
– high sensitivity
– typical B
ON
: 1.2 mT at room temperature
– typical B
OFF
: –1.2 mT at room temperature
– operates with static magnetic fields and dynamic mag-
netic fields up to 20 kHz
Applications
The HAL115 is the optimal sensor for all applications
with alternating magnetic signals at the sensor position
such as:
– rotating speed measurement,
– commutation of brushless DC-motors and cooling
fans.
Fig. 4–5:
Definition of magnetic switching points for the
HAL115
B
HYS
Output Voltage
0
B
OFF
B
ON
V
OL
V
O
B
Magnetic Characteristics
at T
J
= –40
°
C to +140
°
C, V
DD
= 4.5 V to 24 V,
Typical Characteristics for V
DD
= 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
T
J
On point B
ON
Typ.
Off point B
OFF
Typ.
Hysteresis B
HYS
Typ.
Unit
Min.
Max.
Min.
Max.
Min.
Max.
–40
°
C
–10.7
1.4
12.5
–12.5
–1.4
10.7
1.8
2.8
7
mT
25
°
C
–10.7
1.2
12.5
–12.5
–1.2
10.7
1.8
2.4
7
mT
100
°
C
–10.7
1
12.5
–12.5
–1
10.7
1.5
2
7
mT
140
°
C
–10.7
0.9
12.5
–12.5
–0.9
10.7
1
1.8
7
mT
The hysteresis is the difference between the switching points B
HYS
= B
ON
– B
OFF
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL5xx family if higher robustness against mechanical stress is required.
相關PDF資料 |
PDF描述 |
|---|---|
| HAL114SF-K | Hall Effect Sensor Family |
| HAL114UA-K | Hall Effect Sensor Family |
| HAL115SF-C | Hall Effect Sensor Family |
| HAL115SF-E | Hall Effect Sensor Family |
| HAL115SF-K | Hall Effect Sensor Family |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HAL114SF-K | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Hall Effect Sensor Family |
| HAL114SO-A | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Unipolar Hall Switch IC |
| HAL114SO-C | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Unipolar Hall Switch IC |
| HAL114SO-E | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Unipolar Hall Switch IC |
| HAL114UA-A | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Unipolar Hall Switch IC |
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