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參數(shù)資料
| 型號(hào)： | HAF2011S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET Series(N溝道MOSFET) |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管系列（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 98K |
| 代理商： | HAF2011S |
HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching
ADE-208-738 (Z)
Target specification
1st. Edition
Jan. 1999
Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
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| HAF2012 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Series Power Switching |
| HAF2012(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
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