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參數(shù)資料
| 型號： | HAF2011S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET Series(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應(yīng)晶體管系列（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 98K |
| 代理商： | HAF2011S |
HAF2011(L),HAF2011(S)
4
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
I
D2
V
(BR)DSS
(25)
—
—
A
V
GS
= 3.5V, V
DS
= 2V
V
GS
= 1.2V, V
DS
= 2V
I
D
= 10mA, V
GS
= 0
Drain current
—
—
10
mA
Drain to source breakdown
voltage
60
—
—
V
Gate to source breakdown
voltage
V
(BR)GSS
(16)
—
—
V
I
G
= (300
μ
A), V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
(–2.5)
—
—
V
I
G
= (–100
μ
A), V
DS
= 0
Gate to source leak current
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(op)1
I
GS(op)2
I
DSS
—
—
100
μ
A
μ
A
μ
A
μ
A
mA
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
GS
= 1.2V, V
DS
= 0
V
GS
= –2.4V, V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
—
—
50
—
—
1
—
—
–100
Input current (shut down)
—
0.8
—
—
0.35
—
mA
μ
A
Zero gate voltege drain
current
—
—
250
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
1.0
—
2.25
V
m
I
D
= 1mA, V
DS
= 10V
I
D
= 20A, V
GS
= 4V*
3
Static drain to source on state
resistance
—
25
33
Static drain to source on state
resistance
R
DS(on)
—
15
20
m
I
D
= 20A, V
GS
= 10V
*
3
Forward transfer admittance
|y
fs
|
Coss
25
50
—
S
I
D
= 20A, V
DS
= 10V
*
3
V
= 10V , V
GS
= 0
f = 1 MHz
Output capacitance
—
940
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
(7.8)
—
μ
s
μ
s
μ
s
μ
s
V
I
D
= 5A, V
GS
= 5V
R
L
= 6
Rise time
—
(64)
—
Turn-off delay time
—
(19)
—
Fall time
—
(30)
—
Body–drain diode forward
voltage
—
(0.85)
—
I
F
= 40A, V
GS
= 0
Body–drain diode reverse
recovery time
t
rr
—
( )
—
ns
I
F
= 40A, V
GS
= 0
diF/ dt =50A/
μ
s
V
GS
= 5V, V
DD
= 12V
V
GS
= 5V, V
DD
= 24V
Over load shut down
t
os1
t
os2
—
( )
—
ms
operation time
*
4
—
( )
—
ms
Note:
3. Pulse test
4. Include the time shiff based on increasing of chennel temperature when operete under over load
condition.
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