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參數(shù)資料
| 型號(hào)： | HAF2007L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET Series Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管系列電源開關(guān) |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 42K |
| 代理商： | HAF2007L |
HAF2007(L), HAF2007(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
I
D2
(5)
—
—
A
V
GS
= 3.5V, V
DS
= 2V
V
GS
= 1.2V, V
DS
= 2V
I
D
= 10mA, V
GS
= 0
I
G
= (300
μ
A), V
DS
= 0
I
G
= (–100
μ
A), V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
GS
= 1.2V, V
DS
= 0
V
GS
= –2.4V, V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 2.5A, V
GS
= 4V
Note3
Drain current
—
—
10
mA
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
60
—
—
V
(16)
—
—
V
(–2.5)
—
—
V
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(op)1
I
GS(op)2
I
DSS
V
GS(off)
R
DS(on)
—
—
100
μ
A
μ
A
μ
A
μ
A
—
—
50
—
—
1
—
—
–100
Input current (shut down)
—
0.8
—
mA
—
0.35
—
mA
Zero gate voltege drain current
—
—
10
μ
A
Gate to source cutoff voltage
1.0
—
2.25
V
Static drain to source on state
resistance
—
100
160
m
Static drain to source on state
resistance
R
DS(on)
—
70
100
m
I
D
= 2.5A, V
GS
= 10V
Note3
Forward transfer admittance
|y
fs
|
Coss
(5)
(18)
—
S
I
D
= 2.5A, V
DS
= 10V
Note3
V
= 10V , V
GS
= 0
f = 1 MHz
Output capacitance
—
(260)
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
( )
—
μ
s
μ
s
μ
s
μ
s
I
D
= 2.5A, V
GS
= 5V
R
L
= 12
Rise time
—
( )
—
Turn-off delay time
—
( )
—
Fall time
—
( )
—
Body–drain diode forward voltage
—
(1.0)
—
V
I
F
= 2.5A, V
GS
= 0
I
= 5A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
—
( )
—
ns
Over load shut down
t
os1
t
os2
—
( )
—
ms
V
GS
= 5V, V
DD
= 12V
V
GS
= 5V, V
DD
= 24V
operation time
Note4
Note:
3. Pulse test
4. Include the time shift based on increasing of chennel temperature when operete under over load
condition.
—
( )
—
ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF2007S | Silicon N Channel MOS FET Series Power Switching |
| HAF2008 | SILICON N CHANNEL MOSFET SERIES POWER SWITCHING |
| HAF2011 | Silicon N Channel MOS FET Series(N溝道MOSFET) |
| HAF2011L | Silicon N Channel MOS FET Series(N溝道MOSFET) |
| HAF2011S | Silicon N Channel MOS FET Series(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2007S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
| HAF2008 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOSFET SERIES POWER SWITCHING |
| HAF2011 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET Series Power Switching |
| HAF2011-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
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