參數(shù)資料
型號： H11F2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 光電耦合器
英文描述： PHOTO FET OPTOCOUPLERS
中文描述： 1 CHANNEL FET OUTPUT OPTOCOUPLER
封裝： DIP-6
文件頁數(shù)： 1/9頁
文件大?。?/td> 403K
代理商： H11F2
PACKAGE
SCHEMATIC
PHOTO FET OPTOCOUPLERS
6/24/02
Page 1 of 9
2002 Fairchild Semiconductor Corporation
H11F1 H11F2 H11F3
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
≤
100
to
≥
≥
99.9% linearity
≤
15 pF shunt capacitance
≥
100 G
I/O isolation resistance
300 M
As an analog switch
Extremely low offset voltage
60 V
pk-pk
signal capability
No charge injection or latch-up
t
on
, t
off
≤
15 μS
UL recognized (File #E90700)
VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
Isolated variable attenuator
Automatic gain control
Active filter fine tuning/band switching
As an analog switch –
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
6
1
6
1
6
1
1
2
6
5
4
OUTPUT
TERM.
OUTPUT
TERM.
ANODE
CATHODE
3
相關(guān)PDF資料
PDF描述
H11F3 PHOTO FET OPTOCOUPLERS
H11G1M Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.6 to 3.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
H11G1SM Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.7 to 3.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
H11G1SR2M Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
H11G1SR2VM Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H11F2_Q 功能描述:MOSFET輸出光電耦合器 DIP-6 ANALOG FET RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道數(shù)量:1 Channel 輸出設(shè)備:Photo MOSFET 絕緣電壓:5000 Vrms 正向電流: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝:Reel
H11F2300 功能描述:MOSFET輸出光電耦合器 Optocoupler FET Bilateral analog RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道數(shù)量:1 Channel 輸出設(shè)備:Photo MOSFET 絕緣電壓:5000 Vrms 正向電流: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝:Reel
H11F2300W 功能描述:MOSFET輸出光電耦合器 Optocoupler FET Bilateral analog RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道數(shù)量:1 Channel 輸出設(shè)備:Photo MOSFET 絕緣電壓:5000 Vrms 正向電流: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝:Reel
H11F23S 功能描述:MOSFET輸出光電耦合器 Optocoupler FET Bilateral analog RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道數(shù)量:1 Channel 輸出設(shè)備:Photo MOSFET 絕緣電壓:5000 Vrms 正向電流: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝:Reel
H11F23SD 功能描述:MOSFET輸出光電耦合器 Optocoupler FET Bilateral analog RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道數(shù)量:1 Channel 輸出設(shè)備:Photo MOSFET 絕緣電壓:5000 Vrms 正向電流: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝:Reel
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